^zmi-lonauetoi i/^ioducti, una. 20 stern ave. springfield, new jersey 07081 u.s.a. mac210fp series mac210afp telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 isolated triacs thyristors 10 amperes rms 200 thru 800 volts mt2 mt1 mac210fp series mac210afp series electrical characteristics (tc = 25c unless otherwise noted.) characteristic peak blocking current (either direction) {vd = rated vdrm, gate open) tj = 25c tj = +125c peak on-state voltage (either direction) (ijm = 14 a peak; pulse width = 1 to 2 ms, duty cycle ^ 2%) gate trigger current (continuous dc) (main terminal voltage = 12 vdc, r|_ = 100 ohms minimum gate pulse width - 2 (is) mt2(+). g(+) mt2(+). g(-) mt2(-), g(-) mt2(-), g(+) "a" suffix only gate trigger voltage (continuous dc) (main terminal voltage = 12 vdc, rl = 100 ohms minimum gate pulse width = 2 (is) mt2(+), g(+) mt2(+), g(-) mt2(-),g(-) mt2(-), g(+) "a" suffix only (main terminal voltage = rated vdrm, rl= 10 kq- tj = +125c mt2(+), g(+); mt2(+). g(-); mt2{-), g(-) mt2(-), g(+) "a" suffix only holding current (either direction) (main terminal voltage = 12 vdc, gate open, initiating current = 500 ma, tc = +25c) turn-on time (rated vdrm, itm = 14 a, iqj = 120 ma, rise time = 0.1 (is, pulse width = 2 u,s) critical rate of rise of commutation voltage (vd = rated vdrm' 'tm = 14 a> commutating di/dt = 5.0 a/ms, gate unenergized, tc = +70c) critical rate of rise of off-state voltage (vd = rated vqrm, exponential voltage rise, gate open, tc = +703c) symbol idrm vtm 'gt vgt ih tgt dv/dt(cj dv/dt min ? ? ? ? ? ? _ ? ? ? ? 0.2 0.2 ? ? ? ? typ ? ? 1.2 12 12 20 35 0.9 0.9 1.1 1.4 ? ? 6 1.5 5 100 max 10 2 1.65 50 50 50 75 2 2 2 2,5 ? ? 50 ? _ ? unit ma ma volts ma volts ma ^ls v/ms v/(is quality semi-conductors
maximum ratings (tj = 25c unless otherwise noted.) rating repetitive peak off-state voltageo) (tj = -40 to +125c) 1/2 sine wave 50 to 60 hz, gate open mac210-4fp, mac210a4fp mac210-6fp, mac210a6fp mac210-8fp, mac210a8fp MAC210-10FR mac210a10fp on-state rms current (tc = +70cc) full cycle sine wave 50 to 60 hz(2) peak nonrepetitive surge current (one full cycle, 60 hz, tc = +70c) preceded and followed by rated current circuit fusing (t = 8.3 ms) peak gate power (tc = +70c, pulse width = 10 (is) average gate power (tc = +70c, t = 8.3 ms) peak gate current (tc = +70c, pulse width = 10 us) rms isolation voltage (ta = 25'c, relative humidity ^ 20%) operating junction temperature storage temperature range symbol vdrm 't(rms) ]tsm |2| pgm pg(av) 'gm v(iso) tj tstq value 200 400 600 800 10 100 40 20 0.35 2 1500 -40to+125 -40 to +125 unit volts amps amps a2s watts watt amps volts c o thermal characteristics characteristic thermal resistance, junction to case thermal resistance, case to sink thermal resistance, junction to ambient symbol rbjc rgcs reja max 2.2 2.2 (typ) 60 unit cc/w 'c/w cc/w 1. vdrm for all types can be applied on a continuous basis. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2.the casetemperaturereferentepointforalltcmeasurementsisapotntonthecenterleadofthe package asclose as possible totheplastic body.
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